학술행사
Direct Growth of Graphene by Chemical Vapor Deposition with CH4 and CO2
- 일시 2020-07-13 15:00 ~ 16:00
- 장소 2020 KPS Spring Meeting
- 연사 Dongwoon Kang, Yongho Seo
- 소속 세종대 나노신소재공학과
Graphene is a material that forms a two-dimensional planar structure in which carbon atoms have shared bonds, and has excellent mechanical properties like elasticity, and high thermal conductivity. Graphene, in particular, has higher charge mobility than silicon. Because of these superior characteristics, it has been consistently studied and developed to utilize it in various fields [1-2]. Chemical vapor deposition(CVD) is the widely used method for growing graphene because it can produce large area of transparent and conductive graphene [3]. However, CVD graphene has to go through the transfer process for the actual applications. This process causes damage to graphene. CVD graphene having thin thickness and large area may be damaged severely in the transfering process. In addition, graphene is contaminated by the polymer used in the transfer process. A method for overcoming this problem is direct growth of graphene with metal catalyst. This allows graphene to grow directly on the substrate from which the device is fabricated, eliminating the need for a transfer process. However, the method of directly growing graphene using a metal catalyst is not free for the substrate. In order to grow graphene directly, a metal such as copper or nickel should be deposited on the substrate. In addition, there are currently no generalized metal catalysts except copper or nickel.
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