Heterogeneous integration of functional materials offers exciting new opportunities for 
advanced device platforms and functional systems. In this talk, I will introduce the integration of 
III-V and III-N compound semiconductors with 2D materials for electronics and optoelectronics.
I will first introduce three epitaxy techniques for synthesizing thin films on 2D materials; remote 
epitaxy, quasi-van der Waals epitaxy, and selective-area epitaxy [1,2]. I will discuss the 
challenges and prospects of each approach, in terms of the availability of materials, the quality 
of as-grown thin films, and the compatibility with various transfer and integration processes. 
The mode of epitaxy among these three scenarios is often not straightforward to determine, 
and I will outline the available strategies for identifying the epitaxial mode on 2D materials.
In the second part of the talk, I will introduce new concepts of devices that can be achieved by 
these hetero-integration approaches. As a notable example, I will show full-color micro-LEDs for 
AR/VR applications [3]. The application for heterogeneously integrated silicon platforms and 
flexible electronics will also be discussed.