세미나

Highly enhanced ferroelectricity in HfO2-based thin films achieved by oxygen vacancy engineering

  • 일시 2022-11-02 15:00 ~ 18:00
  • 장소 대양AI센터 B116호
  • 연사 김윤석 교수
  • 소속 성균관대학교 신소재공학부

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. Although ferroelectricity has been studied for the application of next-generation electronic devices for over 40, conventional perovskite ferroelectrics have practical limitations owing to scaling effects and a low compatibility with complementary metal-oxide semiconductor (CMOS) processes. The discovery of HfO2–based fluorite ferroelectrics that are compatible with CMOS processes has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO2–based fluorite ferroelectrics are still mysterious. In this presentation, I will present how we are able to activate ferroelectricity in the fluorite ferroelectrics.[1] By performing experiments and theoretical calculations, we reveal that oxygen vacancy is a key parameter for stabilizing ferroelectric orthorhombic phase in the HfO2–based fluorite ferroelectrics. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.