Chalcogenide materials have promising physical and electrical characteristics for use in advanced memory and electronic synaptic devices. However, limited research has been conducted on chalcogenide materials for highly advanced and scalable memory devices. In this study, we investigate compliance current (CC)-controlled resistive switching (RS) in a monochalcogenide GeS-based conductive bridge random access memory (CBRAM) device for use in advanced memory and electronic synapses. A CBRAM device with a structure stacking sequence of Ag/GeS/Pt/Ti/SiO2 is fabricated by depositing a 13 nm GeS layer using a sputtering process. The GeS-based CBRAM device exhibits the reversible CC-controlled transition between threshold resistive switching (T-RS) and bipolar resistive switching (B-RS). Under a high CC (1 mA and above), the device exhibits B-RS behavior with excellent retention and highly reproducible endurance characteristics, illustrated by a very high ION/IOFF ratio of almost ∼2 × 108. Under a low CC (100 µA and below), the device exhibits T-RS, with the automatic transition from a low resistance state (LRS) to a high resistance state (HRS) when sweeping the voltage in the reverse direction. Under all CC conditions, the device has a very low HRS current of around ∼1 × 10−12 A. A model based on the formation and rupture of conductive filaments (CFs) is proposed to explain the coexistence of T-RS and B-RS in GeS-based CBRAM devices. In particular, the change in the size and geometry of the CFs in accordance with the applied CC is speculated to be the main reason for the coexistence of T-RS and B-RS. The retention characteristics of the device in both T-RS and B-RS mode are investigated for possible application to case-sensitive hardware-based data security and the disposal of trusted and untrusted information. The ability of the CBRAM device in T-RS mode to perform important biological synaptic functions for potential use in brain-inspired neuromorphic systems is also investigated.