Herein, the fabrication of a novel highly sensitive and fast hydrogen (H2) gas sensor, based on the Ta2O5 Schottky diode, is described. First, Ta2O5 thin films are deposited on silicon carbide (SiC) and silicon (Si) substrates via a radio frequency (RF) sputtering method. Then, Pd and Ni are respectively deposited on the front and back of the device. The deposited Pd serves as a H2 catalyst,
while the Ni functions as an Ohmic contact. The devices are then tested under various concentrations
of H2 gas at operating temperatures of 300, 500, and 700  C. The results indicate that the Pd/Ta2O5
Schottky diode on the SiC substrate exhibits larger concentration and temperature sensitivities than
those of the device based on the Si substrate. In addition, the optimum operating temperature of
the Pd/Ta2O5 Schottky diode for use in H2 sensing is shown to be about 300  C. At this optimum
temperature, the dynamic responses of the sensors towards various concentrations of H2 gas are then
examined under a constant bias current of 1 mA. The results indicate a fast rise time of 7.1 s, and a
decay of 18 s, for the sensor based on the SiC substrate.