Short-wave length infrared (SWIR) photon detection has become an essential technology in the modern world.

Sensitive SWIR detector arrays with high pixel density, low noise levels, and high sensitivity are highly desirable for a variety of applications including biophotonics, light detection and ranging, optical tomography, and astronomical imaging. As such many efforts in infrared detector research are directed toward improving the performance of the photon detectors operating in this wavelength range.

In this talk, InP/In GaAs heterojunction phototransistor (HPT) based 320 × 256 focal plane arrays (FPAs) for the low-flux SWIR application will be introduced. The HPT takes advantage of a unique three dimensional geometry and combines the efficiency of a large absorbing volume with the sensitivity of a low dimensional switch (injector) to sense and amplify signals. Issues for the fabrication of the HPT-based FPAs, such as passivation, planarization, and indium bump, are elucidated. Finally, experimental results of the FPAs bond ed with a commercially available readout integrated circuit (ROIC) are exhibited.