연구 Highlight
[초청강연]InAsSb-based III-V Semiconductor Structures for Future Spintronics
Realizing a large Landé g-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using InAsSb-based III-V semiconductor structures, we demonstrate an unprecedented high value of |g| ≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields [1]. In addition, we show that the g-factor can be tuned on demand from 20 to 110 via varying the semiconductor thicknesses. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes InAsSb as a promising and competitive material platform for future quantum devices but also provides a new route toward g-factor engineering in semiconductor structures.
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